生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 最高频带: | KU BAND |
JESD-30 代码: | R-CDFM-F2 | 端子数量: | 2 |
工作模式: | DEPLETION MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE900089A | NEC |
获取价格 |
Ku-BAND MEDIUM POWER GaAs MESFET | |
NE900089A | CEL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
NE9001 | NEC |
获取价格 |
Ku-BAND MEDIUM POWER GaAs MESFET | |
NE900100 | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S | |
NE900100 | NEC |
获取价格 |
Ku-BAND MEDIUM POWER GaAs MESFET | |
NE900100G | NEC |
获取价格 |
Ku-BAND MEDIUM POWER GaAs MESFET | |
NE900100G | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S | |
NE900175 | NEC |
获取价格 |
Ku-BAND MEDIUM POWER GaAs MESFET | |
NE900175 | RENESAS |
获取价格 |
KU BAND, GaAs, N-CHANNEL, RF POWER, FET | |
NE900175 | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S |