5秒后页面跳转
捷配首页

Datasheet > NE900089A
NE900089A PDF预览

NE900089A

更新时间： 2024-01-07 12:25:52
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管放大器
页数 文件大小 规格书
5页 72K
描述
Ku-BAND MEDIUM POWER GaAs MESFET

阅读下载

中文翻译

获取价格

NE900089A 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：DISK BUTTON, O-CRDB-F4Reach Compliance Code：unknown
风险等级：5.92最高频带：KU BAND
JESD-30 代码：O-CRDB-F4端子数量：4
工作模式：DEPLETION MODE封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：ROUND封装形式：DISK BUTTON
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：RADIAL晶体管应用：SWITCHING
晶体管元件材料：GALLIUM ARSENIDE

NE900089A 数据手册

 浏览型号NE900089A的Datasheet PDF文件第2页浏览型号NE900089A的Datasheet PDF文件第3页浏览型号NE900089A的Datasheet PDF文件第4页浏览型号NE900089A的Datasheet PDF文件第5页 
NE9000 SERIES  
NE9001 SERIES  
NE9002 SERIES  
Ku-BAND MEDIUM  
POWER GaAs MESFET  
FEATURES  
TYPICAL LINEAR GAIN vs. FREQUENCY  
•
•
CLASS A OPERATION  
24  
21  
18  
HIGH OUTPUT POWER  
POUT = 26.5 dBm  
G1dB = 7 dB  
•
HIGH POWER ADDED EFFICIENCY  
NE9000  
DESCRIPTION  
15  
The NE9000, NE9001, and NE9002 are 0.5 micron recessed  
gate medium power GaAs FETs for commercial and space  
amplifier and oscillator applications to 20 GHz. Chip configu-  
rations available are: the NE900000, a one cell die of 400 µm  
gate width; the NE900100, a one cell die of 750 µm gate  
width; and the NE900200, a two cell die of 1500 µm total gate  
width. The series is available in chip form or a variety of  
hermetic ceramic packages. The NE900000, NE900100,  
and NE900200 are standard die without wrap-around source-  
metallization, while the NE900000G, NE900100G, and  
NE900200G have wrap-around source metallization. The  
series is space qualified.  
NE9001/9002  
12  
9
6
3
2.0  
10.0  
Frequency (GHz)  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
NE900000  
NE900000G  
NE900075  
NE900100  
NE900100G  
NE900175  
NE900200  
NE900200G  
NE900275  
NE900089A  
89A  
PACKAGE OUTLINE  
00 (CHIP), 75  
00 (CHIP), 75  
00 (CHIP), 75  
SYMBOLS  
PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX  
IDSS  
Saturated Drain Current at  
VDS = 2.5 V, VGS = 0  
mA  
80  
120 150  
80  
120 150 150 225 300 300 450 600  
VP  
gm  
Pinch-off Voltage at VDS = 2.5 V,  
IDS = 2.5 mA  
V
V
V
-1.5 -3.5  
-5  
-1.5 -3.5  
-5  
IDS = 5 mA  
-2  
-3.5  
50  
-5  
IDS = 10 mA  
-2  
-3.5  
100  
-5  
Transconductance at VDS = 2.5 V,  
IDS = 50 mA  
IDS = 90 mA  
mS  
mS  
mS  
25  
25  
IDS = 180 mA  
RTH (C-C) ThermalResistance(Channel-to-Case)  
°C/W  
180  
0.8  
180  
0.8  
100  
1.5  
50  
3
PT  
TotalPowerDissipation  
W
PTEST  
Power Output at Test Point  
PIN = 11 dBm, VDS = 8V, ID = 50mA,  
f = 8 GHz  
dBm 19.5 20.5  
PIN = 12 dBm,VDS = 8V, ID = 50mA  
f = 14.5 GHz  
dBm  
dBm  
dBm  
19.5 20.5  
PIN = 15 dBm, VDS = 8V, ID = 90mA  
f = 14.5 GHz  
PIN = 19 dBm, VDS = 8 V, ID = 180 mA,  
f = 14.5  
22  
23  
23  
25.5 26.5  
P1dB  
Output Power at 1 dB Compression  
Point,  
VDS = 8 V, ID = 50 mA, f = 8 GHz  
VDS = 8 V, ID = 50 mA, f = 14.5 GHz  
VDS = 8 V, ID = 90 mA, f = 14.5 GHz  
VDS = 8 V, ID = 180 mA, f = 14.5 GHz  
dBm  
dBm  
dBm  
dBm  
20.5  
9
20  
25  
G1dB  
Gain at 1 dB Compression Point  
VDS = 8 V, ID = 50 mA, f = 8 GHz  
VDS = 8 V, ID = 50 mA, f = 14.5 GHz  
VDS = 8 V, ID = 90 mA, f = 14.5 GHz  
VDS = 8 V, ID = 180 mA, f = 14.5 GHz  
dB  
dB  
dB  
dB  
8
7
7
ηADD  
Power Added Efficiency  
VDS = 8 V, at P1dB Conditions.  
%
27  
27  
27  
26  
California Eastern Laboratories  
12345

中文翻译

下载PDF

与NE900089A相关器件

型号 品牌 获取价格 描述 数据表
NE9001 NEC

获取价格

 		Ku-BAND MEDIUM POWER GaAs MESFET
NE900100 CEL

获取价格

 		RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S
NE900100 NEC

获取价格

 		Ku-BAND MEDIUM POWER GaAs MESFET
NE900100G NEC

获取价格

 		Ku-BAND MEDIUM POWER GaAs MESFET
NE900100G CEL

获取价格

 		RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S
NE900175 NEC

获取价格

 		Ku-BAND MEDIUM POWER GaAs MESFET
NE900175 RENESAS

获取价格

 		KU BAND, GaAs, N-CHANNEL, RF POWER, FET
NE900175 CEL

获取价格

 		RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S
NE900176 RENESAS

获取价格

 		RF SMALL SIGNAL, FET
NE900189A RENESAS

获取价格

 		RF SMALL SIGNAL, FET

与NE900089A相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证