生命周期: | Obsolete | 包装说明: | UNCASED CHIP, R-XUUC-N2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | Is Samacsys: | N |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.05 A |
基于收集器的最大容量: | 1.5 pF | 集电极-发射极最大电压: | 12 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 20 |
最高频带: | L BAND | JESD-30 代码: | R-XUUC-N2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 200 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | UNCASED CHIP |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | UPPER | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 4000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE88902 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50MA I(C) | MACRO-X | |
NE88912 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50MA I(C) | TO-72 | |
NE88933 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50MA I(C) | TO-236 | |
NE88935 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50MA I(C) | SOT-173 | |
NE894M03 | CEL |
获取价格 |
NECs NPN SILICON TRANSISTOR | |
NE894M13 | CEL |
获取价格 |
NPN SILICON TRANSISTOR | |
NE894M13 | NEC |
获取价格 |
NPN SILICON TRANSISTOR | |
NE894M13-A | CEL |
获取价格 |
NPN SILICON TRANSISTOR | |
NE894M13-A | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,3V V(BR)CEO,35MA I(C),SOT-416VAR | |
NE894M13-T3-A | CEL |
获取价格 |
NPN SILICON TRANSISTOR |