Datasheet > NE856M02-T1-AZ

NE856M02-T1-AZ

更新时间： 2024-09-27 03:46:43

品牌	Logo	应用领域
CEL		晶体放大器晶体管
页数	文件大小	规格书
8页	170K
描述
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NE856M02-T1-AZ 数据手册

NPN EPITAXIAL SILICON

TRANSISTOR HIGH FREQUENCY

LOW DISTORTION AMPLIFIER

NE856M02

FEATURES

OUTLINE DIMENSIONS(Units in mm)

PACKAGE OUTLINE M02

•

HIGH COLLECTOR CURRENT:

100 mA MAX

NEW HIGH GAIN POWER MINI-MOLD PACKAGE

(SOT-89 TYPE)

HIGH OUTPUT POWER AT 1 dB COMPRESSION:

22 dBm TYP at 1 GHz

HIGH IP3:

BOTTOM VIEW

4.5±0.1

1.6±0.2

1.5±0.1

32 dBm TYP at 1 GHz

DESCRIPTION

NEC's NE856M02 is an NPN silicon epitaxial bipolar transistor

designed for medium power applications requiring high dy-

namic range and low intermodulation distortion. This device

offers excellent performance and reliability at low cost through

NEC's titanium, platinum, gold metallization system and direct

nitride passivation of the surface of the chip. The NE856M02

isanexcellentchoiceforlownoiseamplifiersintheVHFtoUHF

band and is suitable for CATV and other telecommunication

applications.

0.42

±0.06

0.42

±0.06

0.25±0.02

0.45

±0.06

1.5

3.0

PIN CONNECTIONS

E: Emitter

C: Collector

B: Base

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE856M02

2SC5336

M02

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

1.0

ICBO

IEBO

Collector Cutoff Current at VCB = 10 V, IE = 0

µA

Emitter Cutoff Current at VEB = 1 V, IC = 0

1.0

hFE

DC Current Gain at VCE = 10 V, IC = 20 mA

120

6.5

250

Gain Bandwidth Product at VCE = 10 V, IC = 20 mA

Feed-back Capacitance at VCB = 10 V, IE = 0, f = 1.0 MHz

Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 1 GHz

Noise Figure 1 at VCE = 10 V, IC = 7 mA, f = 1 GHz

Noise Figure 2 at VCE = 10 V, IC = 40 mA, f = 1 GHz

GHz

CRE

0.5

0.8

3.0

|S21E|²

12.0

1.1

NF1

NF2

1.8

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

California Eastern Laboratories

12 3 4 5 6 7 8

中文翻译

下载PDF

与NE856M02-T1-AZ相关器件

型号	品牌	获取价格	描述	数据表
NE856M03	NEC	获取价格	NPN SILICON TRANSISTOR
NE856M03	CEL	获取价格	NPN SILICON TRANSISTOR
NE856M03-A	CEL	获取价格	NPN SILICON TRANSISTOR
NE856M03-T1-A	CEL	获取价格	NPN SILICON TRANSISTOR
NE856M13	NEC	获取价格	NPN SILICON TRANSISTOR
NE856M23	NEC	获取价格	NPN SILICON TRANSISTOR
NE86950BA-T	YAGEO	获取价格	LAN Controller, 1 Channel(s), 1.25MBps, CMOS, PQCC84
NE86950BB	YAGEO	获取价格	LAN Controller, 1 Channel(s), 1.25MBps, CMOS, PQFP80
NE86950BB-T	YAGEO	获取价格	LAN Controller, 1 Channel(s), 1.25MBps, CMOS, PQFP80
NE86C92D	NXP	获取价格	IC DATACOM, ETHERNET TRANSCEIVER, PDSO28, Network Interface