Datasheet > NE856M03

NE856M03

更新时间： 2024-09-27 03:46:43

品牌	Logo	应用领域
CEL		晶体晶体管光电二极管放大器
页数	文件大小	规格书
4页	146K
描述
NPN SILICON TRANSISTOR

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NE856M03 数据手册

NPN SILICON TRANSISTOR NE856M03

OUTLINE DIMENSIONS ^{(Units in mm)}

FEATURES

PACKAGE OUTLINE M03

•

NEW M03 PACKAGE:

1.2±0.05

• Smallest transistor outline package available

• Low profile/0.59 mm package height

• Flat lead style for better RF performance

0.8±0.1

•

LOW NOISE FIGURE:

NF = 1.4 dB at 1 GHz

1.4 ±0.1

(0.9)

0.45

HIGH COLLECTOR CURRENT:

ICMAX = 100 mA

0.3±0.1

0.2±0.1

DESCRIPTION

NEC's NE856M03 transistor is designed for low cost amplifier

andoscillatorapplications.Lownoisefigure,highgainandhigh

current capability equate to wide dynamic range and excellent

linearity. NEC's new low profile/flat lead style "M03" package

is ideal for today's portable wireless applications. The NE856

is also available in chip, Micro-x, and eight different low cost

plastic surface mount package styles.

0.59±0.05

+0.1

-0.05

0.15

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE856M03

2SC5432

M03

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz

Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz

Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz

Forward Current Gain at VCE = 3 V, IC = 7 mA

Collector Cutoff Current at VCB = 10 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

GHz

3.0

4.5

1.4

2.5

|S21E|²

7.0

10.0

hFE

145

1.0

1.5

ICBO

IEBO

µA

CRE

Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz

0.7

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

California Eastern Laboratories

12 3 4

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