是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.66 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.1 A | 配置: | Single |
最小直流电流增益 (hFE): | 50 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.2 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE85639-T1-A | CEL |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR | |
NE85639-T1-A | NEC |
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L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC PACKAGE-4 | |
NE85639-T2 | CEL |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
NE856M02 | NEC |
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NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER | |
NE856M02 | CEL |
获取价格 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER | |
NE856M02-T1 | NEC |
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NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER | |
NE856M02-T1-AZ | CEL |
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NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER | |
NE856M03 | NEC |
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NPN SILICON TRANSISTOR | |
NE856M03 | CEL |
获取价格 |
NPN SILICON TRANSISTOR | |
NE856M03-A | CEL |
获取价格 |
NPN SILICON TRANSISTOR |