是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LEAD FREE, PLASTIC PACKAGE-3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.38 | Is Samacsys: | N |
其他特性: | LOW NOISE, HIGH RELIABILITY | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.1 A | 基于收集器的最大容量: | 1 pF |
集电极-发射极最大电压: | 12 V | 配置: | SINGLE |
最高频带: | L BAND | JESD-30 代码: | R-PSSO-F3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 6500 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NE85634-T1 | CEL |
功能相似 ![]() |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE85634-T2 | CEL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |
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NE85635 | CEL |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
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NE85635 | NEC |
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NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
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NE85635-A | NEC |
获取价格 |
暂无描述 |
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NE85637 | ETC |
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TRANSISTOR | BJT | NPN | 100MA I(C) | MACRO-X |
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NE85639 | NEC |
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NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
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NE85639R | NEC |
获取价格 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
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NE85639R-T1 | CEL |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
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NE85639R-T1 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |
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NE85639R-T1-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |
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