生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.57 |
最大集电极电流 (IC): | 0.1 A | 配置: | Single |
最小直流电流增益 (hFE): | 50 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.58 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE85635-A | NEC |
获取价格 |
暂无描述 |
![]() |
NE85637 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 100MA I(C) | MACRO-X |
![]() |
NE85639 | NEC |
获取价格 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
![]() |
NE85639R | NEC |
获取价格 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
![]() |
NE85639R-T1 | CEL |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
![]() |
NE85639R-T1 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |
![]() |
NE85639R-T1-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |
![]() |
NE85639R-T2 | CEL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |
![]() |
NE85639-T1 | CEL |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
![]() |
NE85639-T1 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |
![]() |