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NE85633-T1B-A PDF预览

NE85633-T1B-A

更新时间: 2024-09-26 20:35:07
品牌 Logo 应用领域
日电电子 - NEC 放大器光电二极管晶体管
页数 文件大小 规格书
26页 626K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEAD FREE, PLASTIC PACKAGE-3

NE85633-T1B-A 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.59Is Samacsys:N
最大集电极电流 (IC):0.1 A配置:Single
最小直流电流增益 (hFE):50最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

NE85633-T1B-A 数据手册

 浏览型号NE85633-T1B-A的Datasheet PDF文件第2页浏览型号NE85633-T1B-A的Datasheet PDF文件第3页浏览型号NE85633-T1B-A的Datasheet PDF文件第4页浏览型号NE85633-T1B-A的Datasheet PDF文件第5页浏览型号NE85633-T1B-A的Datasheet PDF文件第6页浏览型号NE85633-T1B-A的Datasheet PDF文件第7页 
NPN SILICON RF TRANSISTOR  
NE856 SERIES  
NEC's NPN SILICON HIGH  
FREQUENCY TRANSISTOR  
FEATURES  
HIGH GAIN BANDWIDTH PRODUCT:  
fT = 7 GHz  
E
LOW NOISE FIGURE:  
1.1 dB at 1 GHz  
B
HIGH COLLECTOR CURRENT: 100 mA  
HIGH RELIABILITY METALLIZATION  
LOW COST  
35 (MICRO-X)  
00 (CHIP)  
DESCRIPTION  
NEC's NE856 series of NPN epitaxial silicon transistors is  
designedforlowcostamplifierandoscillatorapplications. Low  
noise figures, high gain, and high current capability equate to  
wide dynamic range and excellent linearity. The NE856 series  
offers excellent performance and reliability at low cost. This is  
achieved by NEC's titanium/platinum/gold metallization sys-  
tem and their direct nitride passivated base surface process.  
The NE856 series is available in chip form and a Micro-x  
package for high frequency applications. It is also available in  
several low cost plastic package styles.  
32 (TO-92)  
34 (SOT 89 STYLE)  
19 (3 PIN ULTRA SUPER  
MINI MOLD)  
18 (SOT 343 STYLE)  
NE85600  
NOISE FIGURE AND GAIN  
vs. FREQUENCY  
VCC = 10 V, IC 7 mA  
20  
15  
10  
5
4.0  
3.5  
MSG  
G
A
MAG  
3.0  
2.5  
2.0  
30 (SOT 323 STYLE)  
33 (SOT 23 STYLE)  
NFMIN  
1.5  
1.0  
0.4 0.5  
1.0  
2
3
4
5
Frequency, f (GHz)  
39 (SOT 143 STYLE)  
39R (SOT 143R STYLE)  
The information in this document is subject to change without notice. Before using this document, please confirm  
that this is the latest version.  
Date Published: June 28, 2005  

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