NE85633

更新时间： 2024-01-20 12:17:29

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
25页	257K
描述
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

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替代型号

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NE85633 数据手册

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

NE856

SERIES

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT:

fT = 7 GHz

• LOW NOISE FIGURE:

1.1 dB at 1 GHz

• HIGH COLLECTOR CURRENT: 100 mA

• HIGH RELIABILITY METALLIZATION

• LOW COST

35 (MICRO-X)

00 (CHIP)

DESCRIPTION

NEC's NE856 series of NPN epitaxial silicon transistors is

designedforlowcostamplifierandoscillatorapplications. Low

noise figures, high gain, and high current capability equate to

wide dynamic range and excellent linearity. The NE856 series

offers excellent performance and reliability at low cost. This is

achieved by NEC's titanium/platinum/gold metallization sys-

tem and their direct nitride passivated base surface process.

The NE856 series is available in chip form and a Micro-x

package for high frequency applications. It is also available in

several low cost plastic package styles.

32 (TO-92)

34 (SOT 89 STYLE)

19 (3 PIN ULTRA SUPER

MINI MOLD)

18 (SOT 343 STYLE)

NE85600

NOISE FIGURE AND GAIN

vs. FREQUENCY

CC = 10 V, IC 7 mA

4.0

3.5

MSG

MAG

30 (SOT 323 STYLE)

33 (SOT 23 STYLE)

3.0

2.5

2.0

NFMIN

1.5

1.0

0.4 0.5

1.0

39 (SOT 143 STYLE)

39R (SOT 143R STYLE)

Frequency, f (GHz)

California Eastern Laboratories

12 3 4 5 6 7...25

中文翻译

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NE85633 替代型号

型号	品牌	替代类型	描述	数据表
MMBT5179	ONSEMI	功能相似	NPN RF晶体管
KSP10TA	FAIRCHILD	功能相似	NPN Epitaxial Silicon Transistor, 3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM, 2000/A
MMBT5179	FAIRCHILD	功能相似	NPN RF Transistor

与NE85633相关器件

型号	品牌	获取价格	描述	数据表
NE85633Q-A	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85633Q-T1B-A	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85633R-A	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85633R-T1B-A	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85633S-A	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85633S-T1B-A	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85633-T1	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85633-T1B	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE85633-T1B	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85633-T1B-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR