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MMBT5179 PDF预览

MMBT5179

更新时间: 2024-09-25 22:48:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器PC
页数 文件大小 规格书
4页 54K
描述
NPN RF Transistor

MMBT5179 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:3.32
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:334114Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT NPNSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23-ren3Samacsys Released Date:2016-06-16 06:45:05
Is Samacsys:N其他特性:LOW NOISE
最大集电极电流 (IC):0.05 A基于收集器的最大容量:1 pF
集电极-发射极最大电压:12 V配置:SINGLE
最小直流电流增益 (hFE):25最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN功耗环境最大值:0.225 W
最小功率增益 (Gp):15 dB认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):900 MHzVCEsat-Max:0.4 V
Base Number Matches:1

MMBT5179 数据手册

 浏览型号MMBT5179的Datasheet PDF文件第2页浏览型号MMBT5179的Datasheet PDF文件第3页浏览型号MMBT5179的Datasheet PDF文件第4页 
Discr ete P OWER & Sign a l  
Tech n ologies  
MPS5179  
MMBT5179  
PN5179  
C
E
TO-92  
TO-92  
C
C
B
B
E
SOT-23  
Mark: 3C  
E
B
NPN RF Transistor  
This device is designed for use in low noise UHF/VHF amplifiers  
with collector currents in the 100 µA to 30 mA range in common  
emitter or common base mode of operation, and in low frequency  
drift, high ouput UHF oscillators. Sourced from Process 40.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
12  
20  
2.5  
50  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN/MPS5179  
*MMBT5179  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
350  
2.8  
357  
225  
1.8  
556  
mW  
mW/°C  
°C/W  
RθJA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
5179, Rev B  
1997 Fairchild Semiconductor Corporation  

MMBT5179 替代型号

型号 品牌 替代类型 描述 数据表
MMBT5179 ONSEMI

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