Datasheet > NE85633S-T1B-A

NE85633S-T1B-A

更新时间： 2024-11-01 14:54:11

品牌	Logo	应用领域
CEL		放大器光电二极管晶体管
页数	文件大小	规格书
8页	767K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEAD FREE, MINIMOLD PACKAGE-3

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技术参数
数据手册

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NE85633S-T1B-A 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.76	最大集电极电流 (IC)：	0.1 A
基于收集器的最大容量：	1 pF	集电极-发射极最大电压：	12 V
配置：	SINGLE	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	7000 MHz
Base Number Matches：	1

NE85633S-T1B-A 数据手册

NPN SILICON RF TRANSISTOR

NE85633 / 2SC3356

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR MICROWAVE LOW-NOISE AMPLIFICATION

3-PIN MINIMOLD

FEATURES

•

Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz

High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

• 8 mm wide embossed taping

NE85633-A

50 pcs (Non reel)

2SC3356

NE85633-T1B-A

2SC3356-T1B

3 kpcs/reel

• Pin 3 (Collector) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

3.0

100

C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

200

150

Tstg

65 to +150

Note Free air

Document No. PU10209EJ02V0DS (2nd edition)

Date Published June 2004 CP(K)

The mark  shows major revised points.

12 3 4 5 6 7 8

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与NE85633S-T1B-A相关器件

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