生命周期: | Transferred | 包装说明: | LEAD FREE, ULTRA SUPER MINIMOLD, PLASTIC PACKAGE-3 |
Reach Compliance Code: | unknown | 风险等级: | 5.76 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.1 A |
基于收集器的最大容量: | 1.5 pF | 集电极-发射极最大电压: | 12 V |
配置: | SINGLE | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e6 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN BISMUTH | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 4500 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE85619-T2 | CEL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
NE85630 | NEC |
获取价格 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | |
NE85630-T1 | CEL |
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NPN SILICON HIGH FREQUENCY TRANSISTOR | |
NE85630-T1-A | CEL |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR | |
NE85630-T1-A | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
NE85630-T2 | CEL |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN | |
NE85632 | CEL |
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NPN SILICON HIGH FREQUENCY TRANSISTOR | |
NE85632 | NEC |
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NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | |
NE85632-A | CEL |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR | |
NE85632-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |