NE85630

更新时间： 2024-10-31 22:45:23

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
25页	257K
描述
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

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技术参数
数据手册

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NE85630 技术参数

生命周期：	Obsolete	包装说明：	PLASTIC, 30, 3 PIN
Reach Compliance Code：	unknown	风险等级：	5.77
Is Samacsys：	N	其他特性：	LOW NOISE
最大集电极电流 (IC)：	0.1 A	基于收集器的最大容量：	1.5 pF
集电极-发射极最大电压：	12 V	配置：	SINGLE
最高频带：	L BAND	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	4500 MHz	Base Number Matches：	1

NE85630 数据手册

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

NE856

SERIES

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT:

fT = 7 GHz

• LOW NOISE FIGURE:

1.1 dB at 1 GHz

• HIGH COLLECTOR CURRENT: 100 mA

• HIGH RELIABILITY METALLIZATION

• LOW COST

35 (MICRO-X)

00 (CHIP)

DESCRIPTION

NEC's NE856 series of NPN epitaxial silicon transistors is

designedforlowcostamplifierandoscillatorapplications. Low

noise figures, high gain, and high current capability equate to

wide dynamic range and excellent linearity. The NE856 series

offers excellent performance and reliability at low cost. This is

achieved by NEC's titanium/platinum/gold metallization sys-

tem and their direct nitride passivated base surface process.

The NE856 series is available in chip form and a Micro-x

package for high frequency applications. It is also available in

several low cost plastic package styles.

32 (TO-92)

34 (SOT 89 STYLE)

19 (3 PIN ULTRA SUPER

MINI MOLD)

18 (SOT 343 STYLE)

NE85600

NOISE FIGURE AND GAIN

vs. FREQUENCY

CC = 10 V, IC 7 mA

4.0

3.5

MSG

MAG

30 (SOT 323 STYLE)

33 (SOT 23 STYLE)

3.0

2.5

2.0

NFMIN

1.5

1.0

0.4 0.5

1.0

39 (SOT 143 STYLE)

39R (SOT 143R STYLE)

Frequency, f (GHz)

California Eastern Laboratories

12 3 4 5 6 7...25

中文翻译

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与NE85630相关器件

型号	品牌	获取价格	描述	数据表
NE85630-T1	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE85630-T1-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE85630-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85630-T2	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN
NE85632	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE85632	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE85632-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE85632-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
NE85633	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE85633Q-A	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic