生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.7 |
最大集电极电流 (IC): | 0.1 A | 基于收集器的最大容量: | 0.8 pF |
集电极-发射极最大电压: | 5.5 V | 配置: | SINGLE |
最高频带: | L BAND | JESD-30 代码: | R-PDSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 6500 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE851M13-T3 | ETC |
获取价格 |
NECs NPN SILICON TRANSISTOR | |
NE851M13-T3-A | RENESAS |
获取价格 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-3 | |
NE851M13-T3-A | CEL |
获取价格 |
NPN SILICON TRANSISTOR | |
NE851M13-T3-A-FB | RENESAS |
获取价格 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-3 | |
NE851M33 | CEL |
获取价格 |
NECs NPN SILICON TRANSISTOR | |
NE851M33-A | CEL |
获取价格 |
NECs NPN SILICON TRANSISTOR | |
NE851M33-FB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINI | |
NE851M33-T3 | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,5.5V V(BR)CEO,100MA I(C),SOT-416VAR | |
NE851M33-T3-A | CEL |
获取价格 |
NECs NPN SILICON TRANSISTOR | |
NE851M33-T3FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINI |