生命周期: | Obsolete | 包装说明: | DIE-2 |
Reach Compliance Code: | unknown | 风险等级: | 5.78 |
Is Samacsys: | N | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.1 A | 基于收集器的最大容量: | 1 pF |
集电极-发射极最大电压: | 12 V | 配置: | SINGLE |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-XUUC-N2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | UNCASED CHIP | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | UPPER |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 7000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE85600-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
NE85618 | NEC |
获取价格 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | |
NE85618-T1 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
NE85618-T1 | CEL |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR | |
NE85618-T1-A | CEL |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR | |
NE85618-T1-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
NE85618-T2 | CEL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN | |
NE85619 | NEC |
获取价格 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | |
NE85619-A | CEL |
获取价格 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | |
NE85619-T1 | CEL |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |