是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | FLANGE MOUNT, R-CDFM-F2 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.13 | 其他特性: | HIGH RELIABILITY |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 15 V | 最大漏极电流 (ID): | 2.5 A |
FET 技术: | METAL SEMICONDUCTOR | 最高频带: | C BAND |
JESD-30 代码: | R-CDFM-F2 | JESD-609代码: | e6 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | DEPLETION MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN BISMUTH | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
NE8500295-8-A | NEC | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se |
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|
NE850R599 | NEC | RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Se |
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|
NE850R599A | NEC | C-BAND MEDIUM POWER GaAs MESFET |
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|
NE850R599A-A | NEC | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M |
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|
NE851M03 | CEL | NECs NPN SILICON TRANSISTOR |
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|
NE851M03-T1-A | CEL | NECs NPN SILICON TRANSISTOR |
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