Datasheet > 晶体管 > 射频小信号场效应晶体管> NE8500100-WB

NE8500100-WB

更新时间： 2024-11-19 22:08:31

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	43K
描述
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NE8500100-WB 数据手册

PRELIMINARY DATA SHEET

GaAs MES FET

NE85001 SERIES

1 W C-BAND POWER GaAs FET

N-CHANNEL GaAs MES FET

DESCRIPTION

The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator

applications and so on.

NE8500100 is the two-cells recessed gate chip used in ‘99’ package.

The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

has a PHS. (Plated Heat Sink)

NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.

PHYSICAL DIMENSIONS

146

FEATURES

170

NE8500100 (CHIP) (unit: µm)

•

Class A operation

High power output

High reliability

640

SELECTION CHART

100

PERFORMANCE SPECIFIED

Pout (**)

G^L(**)

USABLE

PART NUMBER

FORM

chip

100

(dBm)

(dB)

FREQUENCY

(GHz)

780

NE8500100(*)

NE8500100-WB

NE8500100-RG

28.5 min

9.0 typ

2.0 to 10

PACKAGE CODE-99 (unit: mm)

NE8500199

package

28.5 min

2.0 to 10

1.0 ±0.1

4.0 MIN BOTH LEADS

SOURCE

WB, RG indicate a type of containers for chips.

WB: black carrier, RG: ring,: gel-pack,

GATE

2.2 ±0.3

2 PLACES

** Specified at the condition at the last page.

4.3 ±0.2

4.0

DRAIN

0.6 ±0.1

5.2 ±0.3

11.0 ±0.3

15.0 ±0.3

0.1

0.2 MAX.

5.0 MAX.

1.7 ±0.15

6.0 ±0.2

1.2

Document No. P10968EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

1996

12 3 4 5 6

中文翻译

下载PDF

与NE8500100-WB相关器件

型号	品牌	获取价格	描述	数据表
NE8500100-WB-A	NEC	获取价格	暂无描述
NE8500199	NEC	获取价格	1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500199-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M
NE85002	NEC	获取价格	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE85002_02	NEC	获取价格	2 WATT C-BAND POWER GaAs MESFET
NE8500200	NEC	获取价格	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500200-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se
NE8500200-RG	NEC	获取价格	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500200-RG-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se
NE8500200-WB	NEC	获取价格	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET