Datasheet > NE6500179A-A

NE6500179A-A

更新时间： 2024-01-27 01:31:19

品牌	Logo	应用领域
日电电子 - NEC		放大器晶体管
页数	文件大小	规格书
8页	39K
描述
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN

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技术参数
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NE6500179A-A 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	MICROWAVE, R-XQMW-F4
针数：	4	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.75
风险等级：	5.84	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	6 V
最大漏极电流 (ID)：	2.5 A	FET 技术：	METAL SEMICONDUCTOR
最高频带：	L BAND	JESD-30 代码：	R-XQMW-F4
JESD-609代码：	e6	元件数量：	1
端子数量：	4	工作模式：	DEPLETION MODE
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	MICROWAVE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN BISMUTH
端子形式：	FLAT	端子位置：	QUAD
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	GALLIUM ARSENIDE

NE6500179A-A 数据手册

PRELIMINARY DATA SHEET

N-CHANNEL GaAs MES FET

NE6500179A

1 W L-BAND POWER GaAs MES FET

DESCRIPTION

The NE6500179A is a 1 W GaAs MES FET designed for middle power transmitter applications for mobile

communication handset and base station systems. It is capable of delivering 1 W of output power (CW) with high

linear gain, high efficiency and excellent distortion.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

•

High output power: P^{O (1 dB)}= 30.0 dBm TYP.

High linear gain: G^L= 12.0 dB TYP.

High power added efficiency: η^add= 50 % TYP. @ V^DS= 6.0 V, I^Dset= 200 mA, f = 1.9 GHz

ORDERING INFORMATION

Part Number

Package

79A

Supplying Form

NE6500179A-T1

• 12 mm wide embossed taping

• Qty 1 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE6500179A

Caution Please handle this device at static-free workstation, because this is an electrostatic

sensitive device.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PG10021EJ01V0DS (1st edition)

(Previous No. P15107EJ1V0DS00)

The mark ! shows major revised points.

NEC Corporation 1999

NEC Compound Semiconductor Devices 2001

Date Published November 2001 CP(K)

Printed in Japan

12 3 4 5 6 7 8

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