生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.69 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 15 A |
最大漏源导通电阻: | 0.12 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 60 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDP510B | FAIRCHILD |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor | |
NDP510BE | FAIRCHILD |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor | |
NDP510BEL | NSC |
获取价格 |
TRANSISTOR 13 A, 100 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET | |
NDP510BEL | TI |
获取价格 |
13A, 100V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
NDP510BES62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Met | |
NDP510BL | NSC |
获取价格 |
TRANSISTOR 13 A, 100 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET | |
NDP510BL | TI |
获取价格 |
13A, 100V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
NDP510BS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Met | |
NDP6020 | FAIRCHILD |
获取价格 |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
NDP6020P | FAIRCHILD |
获取价格 |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |