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NDP6020P_NL PDF预览

NDP6020P_NL

更新时间： 2024-09-20 13:11:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管场效应晶体管
页数 文件大小 规格书
12页 377K
描述
Power Field-Effect Transistor, 24A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN

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NDP6020P_NL 技术参数

生命周期：Obsolete零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.71其他特性：LOGIC LEVEL COMPATIBLE
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (ID)：24 A最大漏源导通电阻：0.05 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：P-CHANNEL最大脉冲漏极电流 (IDM)：70 A
认证状态：Not Qualified表面贴装：NO
端子面层：MATTE TIN端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NDP6020P_NL 数据手册

 浏览型号NDP6020P_NL的Datasheet PDF文件第2页浏览型号NDP6020P_NL的Datasheet PDF文件第3页浏览型号NDP6020P_NL的Datasheet PDF文件第4页浏览型号NDP6020P_NL的Datasheet PDF文件第5页浏览型号NDP6020P_NL的Datasheet PDF文件第6页浏览型号NDP6020P_NL的Datasheet PDF文件第7页 
November 1996  
NDP6020 / NDB6020  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
General Description  
Features  
These logic level N-Channel enhancement mode power  
field effect transistors are produced using National's  
proprietary, high cell density, DMOS technology. This  
very high density process has been especially tailored  
to minimize on-state resistance, provide superior  
switching performance, and withstand high energy  
pulses in the avalanche and commutation modes.  
These devices are particularly suited for low voltage  
applications such as automotive, DC/DC converters,  
PWM motor controls, and other battery powered  
circuits where fast switching, low in-line power loss,  
and resistance to transients are needed.  
35 A, 20 V. RDS(ON) = 0.023 W @ VGS= 4.5 V  
RDS(ON) = 0.028 W @ VGS= 2.7 V.  
Critical DC electrical parameters specified at elevated  
temperature.  
Rugged internal source-drain diode can eliminate the need  
for an external Zener diode transient suppressor.  
175°C maximum junction temperature rating.  
High density cell design for extremely low RDS(ON)  
.
TO-220 and TO-263 (D2PAK) package for both through  
hole and surface mount applications.  
_______________________________________________________________________________  
D
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted  
Symbol  
Parameter  
NDP6020  
NDB6020  
Units  
V
VDSS  
Drain-Source Voltage  
20  
20  
VDGR  
V
Drain-Gate Voltage (RGS < 1 MW)  
Gate-Source Voltage - Continuous  
Drain Current - Continuous  
- Pulsed  
VGSS  
ID  
±8  
35  
V
A
100  
PD  
Total Power Dissipation @ TC = 25°C  
Derate above 25°C  
60  
W
W/°C  
°C  
0.4  
TJ,TSTG  
Operating and Storage Temperature Range  
-65 to 175  
© 1997 Fairchild Semiconductor Corporation  
NDP6020 Rev.C  
1234567...12

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