NDP6030

更新时间： 2024-11-07 22:29:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	59K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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NDP6030 数据手册

July 1997

NDP6030 / NDB6030

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

46 A, 30 V. R_DS(ON)= 0.018 @ V_GS=10 V.

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process has

been especially tailored to minimize on-state resistance and

provide superior switching performance. These devices are

particularly suited for low voltage applications such as DC/DC

converters and other battery powered circuits where fast

switching, low in-line power loss, and resistance to transients

are needed.

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

175°C maximum junction temperature rating.

High density cell design for extremely low R_DS(ON)

TO-220 and TO-263 (D²PAK) package for both through hole

and surface mount applications

________________________________________________________________________________

Absolute Maximum Ratings T_C= 25°C unless otherwise noted

Symbol Parameter

NDP6030

NDB6030

Units

V_DSS

V_DGR

Drain-Source Voltage

Drain-Gate Voltage (R_GS< 1 MW)

Gate-Source Voltage - Continuous

Drain Current - Continuous

- Pulsed

±20

V_GSS

I_D

135

W/°C

°C

P_D

Total Power Dissipation @ T_C= 25°C

Derate above 25°C

Operating and Storage Temperature Range

0.5

T_J,T_STG

-65 to 175

THERMAL CHARACTERISTICS

R_qJC

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

°C/W

R_{q JA}

62.5

NDP6030.RevB

12 3 4

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与NDP6030相关器件

型号	品牌	获取价格	描述	数据表
NDP6030L	FAIRCHILD	获取价格	N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6030L/J69Z	TI	获取价格	52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP6030PL	FAIRCHILD	获取价格	P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6030PL	ONSEMI	获取价格	Power Field-Effect Transistor
NDP6030PLJ69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 30A I(D), 30V, 0.042ohm, 1-Element, P-Channel, Silicon, Met
NDP6030PLS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 30A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Met
NDP6030S62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 46A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
NDP603AL	FAIRCHILD	获取价格	N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP603AL/J69Z	TI	获取价格	25A, 30V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP603AL_NL	FAIRCHILD	获取价格	暂无描述