NDP6020

更新时间： 2024-09-19 22:29:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管场效应晶体管
页数	文件大小	规格书
12页	377K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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数据手册

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NDP6020 数据手册

November 1996

NDP6020 / NDB6020

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Features

These logic level N-Channel enhancement mode power

field effect transistors are produced using National's

proprietary, high cell density, DMOS technology. This

very high density process has been especially tailored

to minimize on-state resistance, provide superior

switching performance, and withstand high energy

pulses in the avalanche and commutation modes.

These devices are particularly suited for low voltage

applications such as automotive, DC/DC converters,

PWM motor controls, and other battery powered

circuits where fast switching, low in-line power loss,

and resistance to transients are needed.

35 A, 20 V. R_DS(ON)= 0.023 W @ V_GS= 4.5 V

R_DS(ON)= 0.028 W @ V_GS= 2.7 V.

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

175°C maximum junction temperature rating.

High density cell design for extremely low R_DS(ON)

TO-220 and TO-263 (D²PAK) package for both through

hole and surface mount applications.

_______________________________________________________________________________

Absolute Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

Parameter

NDP6020

NDB6020

Units

V_DSS

Drain-Source Voltage

V_DGR

Drain-Gate Voltage (R_GS< 1 MW)

Gate-Source Voltage - Continuous

Drain Current - Continuous

- Pulsed

V_GSS

I_D

±8

100

P_D

Total Power Dissipation @ T_C= 25°C

Derate above 25°C

W/°C

°C

0.4

T_J,T_STG

Operating and Storage Temperature Range

-65 to 175

NDP6020 Rev.C

12 3 4 5 6 7...12

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与NDP6020相关器件

型号	品牌	获取价格	描述	数据表
NDP6020P	FAIRCHILD	获取价格	P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6020P	ONSEMI	获取价格	P 沟道，逻辑电平增强型场效应晶体管，-20V，-24A，50mΩ
NDP6020P_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 24A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Meta
NDP6020PJ69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 24A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Meta
NDP6020PS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 24A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Meta
NDP6030	FAIRCHILD	获取价格	N-Channel Enhancement Mode Field Effect Transistor
NDP6030L	FAIRCHILD	获取价格	N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6030L/J69Z	TI	获取价格	52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP6030PL	FAIRCHILD	获取价格	P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6030PL	ONSEMI	获取价格	Power Field-Effect Transistor