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NDP510B PDF预览

NDP510B

更新时间: 2024-11-07 22:29:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管局域网
页数 文件大小 规格书
6页 75K
描述
N-Channel Enhancement Mode Field Effect Transistor

NDP510B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):13 A最大漏极电流 (ID):13 A
最大漏源导通电阻:0.15 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):75 W最大脉冲漏极电流 (IDM):52 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NDP510B 数据手册

 浏览型号NDP510B的Datasheet PDF文件第2页浏览型号NDP510B的Datasheet PDF文件第3页浏览型号NDP510B的Datasheet PDF文件第4页浏览型号NDP510B的Datasheet PDF文件第5页浏览型号NDP510B的Datasheet PDF文件第6页 
May 1994  
NDP510A / NDP510AE / NDP510B / NDP510BE  
NDB510A / NDB510AE / NDB510B / NDB510BE  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
These N-channel enhancement mode power field  
effect transistors are produced using Fairchild's  
proprietary, high cell density, DMOS technology. This  
very high density process has been especially  
tailored to minimize on-state resistance, provide  
superior switching performance, and withstand high  
energy pulses in the avalanche and commutation  
modes. These devices are particularly suited for low  
voltage applications such as automotive, DC/DC  
converters, PWM motor controls, and other battery  
powered circuits where fast switching, low in-line  
power loss, and resistance to transients are needed.  
15 and 13A, 100V. RDS(ON) = 0.12 and 0.15W.  
Critical DC electrical parameters specified at  
elevated temperature.  
Rugged internal source-drain diode can eliminate  
the need for an external Zener diode transient  
suppressor.  
175°C maximum junction temperature rating.  
High density cell design (3 million/in²) for extremely  
low RDS(ON)  
.
TO-220 and TO-263 (D2PAK) package for both  
through hole and surface mount applications.  
_____________________________________________________________________  
D
G
S
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
NDP510A NDP510AE  
NDB510A NDB510AE  
NDP510B NDP510BE  
NDB510B NDB510BE  
Symbol Parameter  
Units  
V
VDSS  
VDGR  
VGSS  
Drain-Source Voltage  
100  
100  
±20  
±40  
V
Drain-Gate Voltage (RGS < 1 MW)  
Gate-Source Voltage - Continuous  
V
V
- Nonrepetitive (tP < 50 ms)  
Drain Current - Continuous  
- Pulsed  
ID  
15  
60  
13  
52  
A
A
PD  
75  
W
Total Power Dissipation @ TC = 25°C  
Derate above 25°C  
0.5  
W/°C  
°C  
TJ,TSTG Operating and Storage Temperature Range  
-65 to 175  
275  
TL  
Maximum lead temperature for soldering  
purposes, 1/8" from case for 5 seconds  
°C  
© 1997 Fairchild Semiconductor Corporation  
NDP510.SAM  

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