Datasheet > MTM684110L

MTM684110L

更新时间： 2024-10-15 20:00:11

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	305K
描述
Transistor

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中文翻译

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技术参数
数据手册

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MTM684110L 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	最大漏极电流 (Abs) (ID)：	4.8 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	DEPLETION MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	1 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

MTM684110L 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

MTM68411

Silicon P-channel MOS FET

For load switch circuits

For switching circuits

 Package

ꢀCode

 Overview

MTM68411 is the low ON resistance dual P-channel MOS FET designed for

load switch circuits.

WMini8-F1

Package dimension clicks here.→ Click!

 Features

ꢀPin Name

1: Source

2: Gate

 Dual P-channel MOS FET in one package

 Low drain-source ON resistance: R_DS(on)typ. = 23 mW (V_GS= -5.0 V)

5: Drain

6: Drain

7: Drain

8: Drain



Small package and surface mounting type: WMini8-F1 (2.8 mm × 2.9 mm × 1.0 mm)

 Low drive voltage: 1.8 V drive

3: Source

4: Gate

 Contributes to miniaturization of sets, reduction of component count.

 Eco-friendly Halogen-free package

 Marking Symbol: 1D

 Packaging

MTM684110L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)

 Internal Connection

 Absolute Maximum Ratings T_a= 25°C

(D) (D) (D)

(D)

Parameter

Drain-source surrender voltage

Gate-source surrender voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Rating

-12

Unit

±8

-4.8

Peak drain current

I_DP

-19

(S) (G) (S) (G)

Power dissipation ^*

P_D

1.0

°C

Channel temperature

Storage temperature

150

stg

–55 to +150

Note)

In case of being attached to 300 mm²area or more of copper foil of a drain on

a glass epoxy board (25.4 mm × 25.4 mm × 0.8 mm)

P_Dabsolute maximum rating without a heat shink: 400 mW

Publication date: January 2012

Ver. CED

12 3

中文翻译

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