5秒后页面跳转
MTM76520 PDF预览

MTM76520

更新时间: 2024-10-15 21:21:55
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
5页 539K
描述
Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, WSMINI6-F1, 6 PIN

MTM76520 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.74配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):2 A
最大漏极电流 (ID):2 A最大漏源导通电阻:0.105 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F6
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.7 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MTM76520 数据手册

 浏览型号MTM76520的Datasheet PDF文件第2页浏览型号MTM76520的Datasheet PDF文件第3页浏览型号MTM76520的Datasheet PDF文件第4页浏览型号MTM76520的Datasheet PDF文件第5页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
MTM76520  
Silicon N-channel MOS FET  
For DC-DC converter circuits  
For switching circuits  
Package  
Overview  
Code  
MTM76520 is the dual N-channel MOS FET that is highly suitable for DC-  
DC converter and other switching circuits.  
WSMini6-F1-B  
Pin Name  
1: Source 1  
2: Gate 1  
4: Source 2  
5: Gate 2  
Features  
Dual N-channel MOS FET in one package  
3: Drain 2  
6: Drain 1  
Low drain-source ON resistance: RDS(on) typ. = 80 mW (VGS = 4.0 V)  
Low short-circuit input capacitance (Common source): Ciss = 280 pF  
Small size surface mounting package: WSMini6-F1-B  
Low drive voltage: 1.8 V drive  
Marking Symbol: JA  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Internal Connection  
(D1) (G2)  
(S2)  
4
6
5
Packaging  
FET1  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
FET2  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Drain-source surrender voltage  
Gate-source surrender voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Rating  
20  
Unit  
V
1
2
3
(S1)  
(G1) (D2)  
V
±10  
2.0  
A
1
Peak drain current *  
IDP  
12  
A
2
700 *  
Power dissipation  
PD  
mW  
3
150 *  
Channel temperature  
Storage temperature  
T
150  
°C  
°C  
ch  
T
stg  
–55 to +150  
Note) 1: t = 10 µs, Duty Cycle < 1%  
*
2: Glass epoxy board: 25.4 mm × 25.4 mm × 0.8 mm  
*
Copper foil of the drain portion should have a area of 300 mm2 or more  
3: Stand-alone (without the board)  
*
Publication date: March 2011  
Ver. CED  
1

与MTM76520相关器件

型号 品牌 获取价格 描述 数据表
MTM765200LBF PANASONIC

获取价格

Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-o
MTM78E2B0LBF PANASONIC

获取价格

Small Signal Field-Effect Transistor, 4A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-o
MTM78E2BLFBF PANASONIC

获取价格

Small Signal Field-Effect Transistor, 4A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-o
MTM7N45 FAIRCHILD

获取价格

N-Channel Power MOSFETs, 8A, 450 V/500V
MTM7N50 FAIRCHILD

获取价格

N-Channel Power MOSFETs, 8A, 450 V/500V
MTM7N50 MOTOROLA

获取价格

Power Field-Effect Transistor, 7A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal
MTM86124 PANASONIC

获取价格

Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
MTM86127 PANASONIC

获取价格

Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
MTM86128 PANASONIC

获取价格

Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
MTM861280LBF PANASONIC

获取价格

Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o