Datasheet > MTM86927

MTM86927

更新时间： 2024-10-16 06:15:03

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
1页	232K
描述
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET

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MTM86927 数据手册

Emphasizing efficiency while contributing to end product miniaturization

MTM86XXX Power Management MOSFET Series

Overview

These devices are power management MOSFETs that are optimal for

mobile equipment such as cell phones and that adopt the newly-

developed WSSMini6-F1 ultraminiature package (1.6 x 1.6 mm).

This product line includes two device types: MOSFET device

products and combined Schottky barrier diode products.

Unit : mm

Feature

• Industry’s top class low on-resistance by finer feature size process

• Industry’s top class small package (WSSMini6-F1)

• Nch + reverse-direction SBD for step-up use: MTM86927

Applications

DC-DC converters (both step-up and step-down converters)

Lineup 【WSSMini6-F1】

WSSMini6-F1

RDS(on) ( m ) typ.

Ciss

VDSS

( V )

VGSS

( V )

Catalog number

MTM86124

Structure

Pch

ID ( A )

-2.0

( pF)

@4V

@2.5V

-20

100

130

400

280

MTM86624A

MTM86227

MTM86727

MTM86927

Pch + SBD

Nch

2.0

2.2

100

110

Nch + SBD

MTM86727 / MTM86927 Combined SBD

VR:20V, IR:80uA, VF:0.47V, IF800mA

MTM86624A: Combined SBD

VR:15V, IR:90uA, VF:0.42V, IF700mA

Application Circuit Examples

Internal Wiring

(Step-up Circuit)

(Step-down/Synchronous Rectifier)

SBD

Pch

Vin

Vout

Vin

Vout

Nch

MTM86927

MTM86727

MTM86227

Products and specifications are subject to change without notice.

Please ask for the latest Product Standards to guarantee the satisfaction

of your product requirements.

1 Kotari-yakemachi, Nagaokakyo, Kyoto 617-8520, Japan

Tel. +81-75-951-8151

New publication, effective from 26 Mar. 2007

M00735CE

http://panasonic.co.jp/semicon

中文翻译

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与MTM86927相关器件

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