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MTM76420 PDF预览

MTM76420

更新时间: 2024-10-15 20:48:47
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
4页 308K
描述
Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, WSMINI6-F1, 6 PIN

MTM76420 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.7
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):1.2 A最大漏极电流 (ID):1.2 A
最大漏源导通电阻:0.13 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F6元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.7 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MTM76420 数据手册

 浏览型号MTM76420的Datasheet PDF文件第2页浏览型号MTM76420的Datasheet PDF文件第3页浏览型号MTM76420的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
MTM76420  
Silicon P-channel MOS FET  
For DC-DC converter circuits  
For switching circuits  
Overview  
Package  
Code  
MTM76420 is the dual P-channel MOS FET that is highly suitable for DC-  
DC converter and other switching circuits.  
WSMini6-F1-B  
Pin Name  
1: Source  
2: Gate  
Features  
4: Source  
5: Gate  
Dual P-channel MOS FET in one package  
Low drain-source ON resistance: RDS(on) typ. = 100 mW (VGS = 4.0 V)  
Low short-circuit input capacitance (common source): Ciss = 440 pF  
3: Drain  
6: Drain  
Small size surface mounting package: WSMini6-F1-B (2.1 mm × 2.0 mm × 0.7 mm)  
Marking Symbol: JC  
Low drive voltage: 1.8 V drive  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Internal Connection  
(D1) (G2)  
(S2)  
4
6
5
Packaging  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
FET1  
FET2  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Drain-source surrender voltage  
Gate-source surrender voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Rating  
-20  
Unit  
V
1
2
3
(S1)  
(G1) (D2)  
V
±10  
A
-1.2  
Peak drain current  
IDP  
A
-7  
Power dissipation *  
PD  
700  
mW  
°C  
°C  
Channel temperature  
Storage temperature  
T
ch  
150  
T
stg  
–55 to +150  
Note) : Measuring on ceramic substrate at 40 mm × 38 mm × 0.2 mm  
*
PD absolute maximum rating without a heat shink: 150 mW  
Publication date: March 2011  
Ver. CED  
1

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