Datasheet > MTM76111

MTM76111

更新时间： 2024-10-15 12:24:51

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
27页	670K
描述
VIN = 2.9V to 5.5V 2ch,0.8A General-purpose High Efficiency Power LSI

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MTM76111 数据手册

AN30181A

VIN = 2.9V to 5.5V 2ch,0.8A

General-purpose High Efficiency Power LSI

FEATURES

DESCRIPTION

High-speed response DC-DC Step-Down Regulator

circuit that employs hysteretic control system :

2-ch (1.2 V, 0.8 A / 1.8 V, 0.8 A)

LDO : 1-ch (0.9 V, 10 mA)

Built-in external Pch MOSFET gate drive circuits

Built-in Reset function

Built-in Under Voltage Lockout function (UVLO)

24pin Plastic Quad Flat Non-leaded Package

(Size : 4 × 4 mm, 0.5 mm pitch)

AN30181A is a power management LSI which has

DC-DC Step Down Regulators (2-ch) that employs

hysteretic control system.

By this system, when load current changes suddenly, it

responds at high speed and minimizes the changes of

output voltage.

Since it is possible to use capacitors with small

capacitance and it is unnecessary to use parts for phase

compensation, this IC realizes downsizing of set and

reducing in the number of external parts.

Output voltages are 1.2 V and 1.8 V. Each maximum

current is 0.8 A.

This LSI has a LDO circuit, external Pch-MOSFET gate

drive circuits and a reset circuit of input power supply

voltage.

APPLICATIONS

High Current Distributed Power Systems such as

SSD (Solid State Drive), Cellular Phone, etc.

SIMPLIFIED APPLICATION

EFFICIENCY CURVE

[DC-DC1]

3.3V

10 kΩ

PVIN1

PCNB RESET PCNT

DIS

PVIN1

VIN=3.3V

VIN=5.0V

4.7 μF

FB1

LX1

VOUT1

10 μF

2.2 μH

100

1000

PVIN2

Load Current [mA]

PVIN2

FB2

VOUT2

10 μF

AN30181A

4.7 μF

Condition : V_IN=3.3V , 5.0V , Vout=1.2V , Cout=10μF , Lout=2.2μH

LX2

AVIN

BUF

AVIN

1.0 μF

[DC-DC2]

4.7 μF

VREG

AGND1 AGND2 PGND1PGND2

100

1.0 μF

Notes) This application circuit is an example. The operation

of mass production set is not guaranteed. You should

perform enough evaluation and verification on the

design of mass production set. You are fully

responsible for the incorporation of the above

application circuit and information in the design of

your equipment.

VIN=3.3V

VIN=5.0V

100

1000

Load Current [mA]

Condition : V_IN=3.3V , 5.0V , Vout=1.8V , Cout=10μF , Lout=2.2μH

Ver. BEB

Publication date: October 2012

12 3 4 5 6 7...27

中文翻译

下载PDF

与MTM76111相关器件

型号	品牌	获取价格	描述	数据表
MTM761110LBF	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-o
MTM761230LBF	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
MTM76320	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, N-Channel and P-Channel,
MTM763200L	PANASONIC	获取价格	Transistor
MTM763250LBF	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 2-Element, N-Channel and P-Channel,
MTM76420	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal
MTM764200LBF	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal
MTM76520	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-o
MTM765200LBF	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-o
MTM78E2B0LBF	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 4A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-o

与MTM76111相关文章

纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

6
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

11
联发科推出全球首款3纳米汽车芯片CT-X1，挑战高通SA8295
2024-10-15

20
国家大基金减持三家半导体企业，市场反应各异
2024-10-15

18

产品中心

服务支持

精选活动

关于我们

帮助中心

MTM76111

MTM76111 数据手册

与MTM76111相关器件

与MTM76111相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MTM76111

MTM76111 数据手册

与MTM76111相关器件

与MTM76111相关文章

您还可以找

您在本页遇到什么问题？