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MTM763200L PDF预览

MTM763200L

更新时间: 2024-10-15 20:41:27
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
6页 710K
描述
Transistor

MTM763200L 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.57最大漏极电流 (Abs) (ID):1.9 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:DEPLETION MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs):0.7 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

MTM763200L 数据手册

 浏览型号MTM763200L的Datasheet PDF文件第2页浏览型号MTM763200L的Datasheet PDF文件第3页浏览型号MTM763200L的Datasheet PDF文件第4页浏览型号MTM763200L的Datasheet PDF文件第5页浏览型号MTM763200L的Datasheet PDF文件第6页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
MTM76320  
Silicon N-channel MOS FET (FET1)  
Silicon P-channel MOS FET (FET2)  
For DC-DC converter circuits  
For switching circuits  
Overview  
Package  
MTM76320 is the composite MOS FET (N-channel and P-channel MOS  
FET) that is highly suitable for DC-DC converter and other switching circuits.  
Code  
WSMini6-F1-B  
Package dimension clicks here.  
Click!  
Features  
N-channel + P-channel MOS FET in one package  
Low drain-source ON resistance: RDS(on) typ. =  
N-ch. : 80 mW (VGS = 4.0 V), P-ch. : 100 mW (VGS = –4.0 V)  
Pin Name  
1. Source (FET1)  
2. Gate (FET1)  
3. Drain (FET2)  
4. Source (FET2)  
5. Gate (FET2)  
6. Drain (FET1)  
Small size surface mounting package: WSMini6-F1-B (2.1 mm × 2.0 mm × 0.7 mm)  
2.5 V drive  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Marking Symbol: JB  
Internal Connection  
Packaging  
(D1) (G2)  
(S2)  
4
MTM763200L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
6
5
Absolute Maximum Ratings Ta = 25°C  
FET1  
Parameter  
Symbol  
VDSS  
VGSS  
ID  
Rating  
20  
Unit  
V
FET2  
Drain-source surrender voltage  
Gate-source surrender voltage  
Drain current  
V
±10  
1
2
3
FET1  
(S1)  
(G1) (D2)  
(N-ch.)  
1.9  
A
Peak drain current  
IDP  
12  
A
Drain-source surrender voltage  
Gate-source surrender voltage  
Drain current  
VDSS  
VGSS  
ID  
–20  
V
V
±10  
FET2  
(P-ch.)  
–1.2  
–7  
A
Peak drain current  
IDP  
A
Total power dissipation *  
PD  
700  
mW  
°C  
°C  
Overall Channel temperature  
Storage temperature  
T
ch  
150  
T
stg  
-55 to +150  
Note) : Measuring on ceramic substrate at 40 mm × 38 mm × 0.2 mm  
*
PD absolute maximum rating without a heat shink: 150 mW  
Publication date: March 2012  
Ver. DED  
1

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