是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, O-MBFM-P2 | Reach Compliance Code: | unknown |
风险等级: | 5.86 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (ID): | 6 A | 最大漏源导通电阻: | 1.2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 150 pF |
JEDEC-95代码: | TO-204AA | JESD-30 代码: | O-MBFM-P2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 150 W | 最大脉冲漏极电流 (IDM): | 30 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 320 ns | 最大开启时间(吨): | 210 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTM6N80E | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 6A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal | |
MTM6N85 | MOTOROLA |
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6A, 850V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
MTM6N90 | MOTOROLA |
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6A, 900V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
MTM76110 | PANASONIC |
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Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-o | |
MTM761100LBF | PANASONIC |
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Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-o | |
MTM76111 | PANASONIC |
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VIN = 2.9V to 5.5V 2ch,0.8A General-purpose High Efficiency Power LSI | |
MTM761110LBF | PANASONIC |
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Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-o | |
MTM761230LBF | PANASONIC |
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Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o | |
MTM76320 | PANASONIC |
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Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, N-Channel and P-Channel, | |
MTM763200L | PANASONIC |
获取价格 |
Transistor |