Datasheet > MRF9100LR3

MRF9100LR3

更新时间： 2024-11-14 05:50:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	357K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRF9100LR3 数据手册

Document Number: MRF9100

Rev. 5, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF9100LR3

MRF9100LSR3

Designed for GSM and EDGE base station applications with frequencies

from 921 to 960 MHz, the high gain and broadband performance of these

devices make them ideal for large-signal, common source amplifier applica-

tions in 26 volt base station equipment.

• On-Die Integrated Input Match

• Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts

Output Power, P1dB — 110 Watts

900 MHz, 110 W, 26 V

GSM/EDGE

Power Gain @ P1dB — 16.5 dB

Efficiency @ P1dB — 53%

LATERAL N-CHANNEL

RF POWER MOSFETs

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz,

100 Watts CW Output Power

Features

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465-06, STYLE 1

NI-780

MRF9100LR3

CASE 465A-06, STYLE 1

NI-780S

MRF9100LSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

- 0.5. +65

- 0.5. +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

175

1.0

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

1.0

°C/W

MRF9100LR3 MRF9100LSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

下载PDF

与MRF9100LR3相关器件

型号	品牌	获取价格	描述	数据表
MRF9100LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF9100R3	MOTOROLA	获取价格	GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF9100SR3	MOTOROLA	获取价格	GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF911	MOTOROLA	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MRF9120	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF9120LR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF9120R3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF9120R3	NXP	获取价格	2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-860, CASE 375B-04, 4 PIN
MRF9120S	MOTOROLA	获取价格	暂无描述
MRF9130L	MOTOROLA	获取价格	RF Power Field Effect Transistors