Datasheet > MRF9200LSR3

MRF9200LSR3

更新时间： 2024-11-14 21:55:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管放大器
页数	文件大小	规格书
12页	324K
描述
N−Channel Enhancement−Mode Lateral MOSFETs

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MRF9200LSR3 数据手册

MRF9200L

Rev. 1, 12/2004

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N−Channel Enhancement−Mode Lateral MOSFETs

MRF9200LR3

MRF9200LSR3

Designed for broadband commercial and industrial applications with

frequencies to 1000 MHz. The high gain and broadband performance of these

devices make them ideal for large−signal, common−source amplifier applica-

tions in 26 volt base station equipment.

• Typical Single−Carrier N−CDMA Performance @ 880 MHz: V_DD= 26 Volts,

I_DQ= 2400 mA, P_out= 40 Watts Avg., IS−95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. Peak/

Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 17.5 dB

880 MHz, 40 W AVG., 26 V

SINGLE N−CDMA

LATERAL N−CHANNEL

RF POWER MOSFETs

Drain Efficiency — 25%

ACPR @ 750 kHz Offset — −46.5 dBc @ 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts N−CDMA

Output Power

• Characterized with Series Equivalent Large−Signal Impedance Parameters

• Internally Matched, Controlled Q, for Ease of Use

• Integrated ESD Protection

• Low Gold Plating Thickness on Leads, 40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465B−03, STYLE 1

NI−880

MRF9200LR3

CASE 465C−02, STYLE 1

NI−880S

MRF9200LSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain−Source Voltage

Gate−Source Voltage

−0.5, +65

−0.5, +15

Vdc

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

3.6

W/°C

Storage Temperature Range

Operating Junction Temperature

−65 to +150

°C

stg

200

CW Operation

Case Temperature 60°C

Case Temperature 80°C

200

160

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 60°C, 200 W CW

Case Temperature 80°C, 40 W CW

°C/W

0.28

0.34

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to

access the MTTF calculators by product.

2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes − AN1955.

NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF9200LR3 MRF9200LSR3

Freescale Semiconductor

Wireless RF Product Device Data

5−1

12 3 4 5 6 7...12

中文翻译

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