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MRF9482T1 PDF预览

MRF9482T1

更新时间: 2024-11-15 19:53:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
2页 55K
描述
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, CASE 449-02, 4 PIN

MRF9482T1 技术参数

生命周期:Obsolete包装说明:FLATPACK, R-PQFP-F4
Reach Compliance Code:unknown风险等级:5.82
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):1.1 A
最大漏极电流 (ID):1.1 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PQFP-F4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLATPACK极性/信道类型:N-CHANNEL
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:QUAD晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MRF9482T1 数据手册

 浏览型号MRF9482T1的Datasheet PDF文件第2页 
Order this document BY MRF9482T1PP/D  
HIGH FREQUENCY  
POWER TRANSISTOR  
LDMOS FET  
Designed for use in low voltage, moderate power amplifiers such as  
portable analog and digital cellular radios and PC RF modems.  
Performance Specifications at 900 MHz, 4.8 V  
Output Power = 36 dBm Typ  
Power Gain = 10 dB Typ  
36 dBm, 900 MHz  
Efficiency = 65% Typ  
SEMICONDUCTOR  
TECHNICAL DATA  
Guaranteed Ruggedness at Load VSWR = 10:1  
New Plastic Surface Mount Package  
Pin 1. Drain  
2. Gate  
3. Source  
4. Source  
3
2
1
4
PLASTIC PACKAGE  
CASE 449  
(PLD–1, Tape & Reel Only)  
MAXIMUM RATINGS  
Rating  
Drain–Source Voltage  
Symbol  
Value  
20  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
DSS  
Drain–Gate Voltage (R  
= 1.0 M)  
V
DGO  
20  
GS  
ORDERING INFORMATION  
Gate–Source Voltage  
V
GS  
±7.0  
1.1  
Device  
Marking  
Package  
Drain Current – Continuous  
I
D
MRF9482T1  
9482  
PLD–1  
Tape & Reel*  
Total Device Dissipation @ T = 50°C  
Derate above 50°C  
P
D
12.5  
125  
W
mW/°C  
C
*1,000 Units per 12 mm, 7 inch reel.  
Storage Temperature Range  
Operating Junction Temperature  
NOTE: ESD data available upon request.  
T
–65 to 150  
150  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction–to–Case  
R
8.0  
°C/W  
θJC  
This document contains information on a product under development. Motorola reserves the  
Motorola, Inc. 1998  
Rev 0  
right to change or discontinue this product without notice.  

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