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MRF951

更新时间: 2024-10-01 10:47:23
品牌 Logo 应用领域
ASI 晶体小信号双极晶体管射频小信号双极晶体管放大器
页数 文件大小 规格书
1页 27K
描述
NPN SILICON RF TRANSISTOR

MRF951 技术参数

生命周期:Active包装说明:DISK BUTTON, O-CRDB-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.37Is Samacsys:N
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:10 V配置:Single
最小直流电流增益 (hFE):50最高频带:L BAND
JESD-30 代码:O-CRDB-F4端子数量:4
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
极性/信道类型:NPN最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MRF951 数据手册

  
MRF951  
NPN SILICON RF TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE  
The ASI MRF951 is Designed for high  
gain. Low noise small-signal amplifiers.  
Dim. Are in mm  
Applications up to 2.0 GHz.  
FEATURES:  
Low Noise Figure  
High Gain  
Omnigold™ Metalization System  
MAXIMUM RATINGS  
IC  
100 mA  
20 V  
VCBO  
VCEO  
VEBO  
PDISS  
TJ  
10 V  
1.5 V  
1.0 W @ TC = 25 °C  
-65 °C to +150 °C  
-65 °C to +150 °C  
100 °C/W  
TSTG  
θJC  
Leads 1 and 3 = Emitter  
2 = Collector  
4 = Base  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
IC = 0.1 mA  
MINIMUM TYPICAL MAXIMUM UNITS  
20  
V
BVCEO  
ICBO  
IC = 0.1 mA  
10  
V
VCB = 10 V  
0.1  
0.1  
200  
µA  
µA  
---  
IEBO  
VEB = 1.0 V  
hFE  
VCE = 6.0 V  
VCB = 10 V  
VCE = 6.0 V  
IC = 5.0 mA  
50  
Ccb  
f = 1.0 MHz  
0.45  
pF  
IC = 5.0 mA  
IC = 5.0 mA  
f = 1.0 GHz  
f = 2.0 GHz  
f = 1.0 GHz  
14  
9.0  
1.9  
GNF  
dB  
dB  
NF50  
VCE = 6.0 V  
2.8  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

MRF951 替代型号

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