Datasheet > MRF9511MLT1

MRF9511MLT1

更新时间： 2024-10-01 21:14:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
1页	339K
描述
Transistor,

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中文翻译

获取价格

技术参数
数据手册

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MRF9511MLT1 技术参数

生命周期：	Obsolete	包装说明：	,
针数：	4	Reach Compliance Code：	compliant
风险等级：	5.83	Base Number Matches：	1

MRF9511MLT1 数据手册

MMBR951MLT1/MRF9511MLT1

RF & MICROWAVE TRANSISTORS

R F P R O D U C T S D I V I S I O N

DESCRIPTION

KEY FEATURES

High FTau-8GHz

The MMBR951MLT1/MRF9511MLT1 are low noise, high gain, discrete

silicon bipolar transistors housed in low cost plastic packages.

Low noise-1.3dB@1GHz

Low cost SOT23/SOT143

package

IMPORTANT:

For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

APPLICATIONS/BENEFITS

ABSOLUTE MAXIMUM RATINGS (T_CASE= 25

Symbol

V_CBO

V_CEO

V_EBO

I_C

P_DISS

T_J

T_STG

ꢀ

Parameter

ꢀ

Value

1.5

100

Unit

LNA, Oscillator

, Pre-Driver

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

Power Dissipation

Junction Temperature

Storage Temperature

322

150

-55 to +150

SOT-143

MRF9511MLT1

SOT-23

MMBR951MLT1

THERMAL DATA

R_TH(j-c)

Junction-Case Thermal Resistance

233

C/W

STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)

Symbol

Test

Conditions

Units

Min.

Typ.

Max.

BV_CBO

BV_CEO

I_EBO

_C= .1mA

_C=.1mA

_E= 0

_B= 0

_C= 0

0.1

200

_EB= 1V

_CE= 6 V

I_C

h_FE

5 mA

DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)

Symbol

Test

Conditions

Units

Min.

Typ.

Max.

C_CB

_CB= 10 V

= 1.0 MHz

.45

_CE= 6 V

FTau

NFmin

= 1.0 GHz

GHz

I_C= 30 mA

I_C= 5 mA

I_C= 30 mA

8.0

1.3

13.5

_CE= 6 V

CXXXX.PDF 2000-11-06

Microsemi

Page 1 of 1

RF Products Division

140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855

中文翻译

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