Datasheet > MRFE6S8046GNR1

MRFE6S8046GNR1

更新时间： 2024-11-09 10:47:23

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飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频光电二极管放大器
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描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRFE6S8046GNR1 数据手册

Document Number: MRFE6S8046N

Rev. 0, 5/2009

Freescale Semiconductor

‘

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRFE6S8046NR1

MRFE6S8046GNR1

Designed for GSM and GSM EDGE base station applications with

frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier

applications.

• Typical GSM Performance: V_DD= 28 Volts, I_DQ= 300 mA, P_out

35.5 Watts CW

864-894 MHz, 35.5 W CW, 28 V

GSM, GSM EDGE

LATERAL N-CHANNEL

RF POWER MOSFETs

Frequency

864 MHz

880 MHz

894 MHz

(dB)

19.9

(%)

58.7

58.5

57.7

19.8

CASE 1486-03, STYLE 1

TO-270 WB-4

• Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 70 Watts CW Output

Power (3 dB Input Overdrive from Rated P_out), Designed for Enhanced

Ruggedness

PLASTIC

MRFE6S8046NR1

• Typical P_out@ 1 dB Compression Point ] 47 Watts CW

• Typical GSM EDGE Performance: V_DD= 28 Volts, I_DQ= 285 mA,

P_out= 17.8 Watts Avg.

Spectral

Regrowth @

400 kHz

Spectral

Regrowth @

600 kHz

CASE 1487-05, STYLE 1

TO-270 WB-4 GULL

PLASTIC

EVM

(% rms)

Frequency

864 MHz

880 MHz

894 MHz

(dB)

19.8

19.9

19.8

(%)

43.8

43.6

43.1

(dBc)

MRFE6S8046GNR1

61.2

63.4

63.7

70.9

72.5

2.1

PARTS ARE SINGLE-ENDED

Features

• Class F Output Matched for Higher Impedances and Greater Efficiency

• Designed for High Efficiency. Typical Drain Efficiency @ P1dB ] 66%

RF /V

out DS

in GS

• Characterized with Series Equivalent Large-Signal Impedance Parameters

and Common Source S-Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

RF /V

in GS

RF /V

out DS

• Greater Negative Gate-Source Voltage Range for Improved Class C

Operation

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +66

-6.0, +10

32, +0

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Operating Voltage

DSS

Storage Temperature Range

Case Operating Temperature

stg

- 65 to +150

150

°C

(1,2)

Operating Junction Temperature

225

°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

MRFE6S8046NR1 MRFE6S8046GNR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...17

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与MRFE6S8046GNR1相关器件

型号	品牌	获取价格	描述	数据表
MRFE6S8046NR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9045NR1	FREESCALE	获取价格	RF Power Field Effect Transistor
MRFE6S9046GNR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9046NR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9060N	NXP	获取价格	Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V
MRFE6S9060NR1	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRFE6S9125NBR1	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9125NR1	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9130HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9130HR3	NXP	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN

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