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MRF949T1 PDF预览

MRF949T1

更新时间: 2024-09-30 22:15:39
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
14页 170K
描述
LOW NOISE TRANSISTORS

MRF949T1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SC-90包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
风险等级:5.38其他特性:LOW NOISE
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:10 V
配置:SINGLE最小直流电流增益 (hFE):50
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):9000 MHzBase Number Matches:1

MRF949T1 数据手册

 浏览型号MRF949T1的Datasheet PDF文件第2页浏览型号MRF949T1的Datasheet PDF文件第3页浏览型号MRF949T1的Datasheet PDF文件第4页浏览型号MRF949T1的Datasheet PDF文件第5页浏览型号MRF949T1的Datasheet PDF文件第6页浏览型号MRF949T1的Datasheet PDF文件第7页 
Order this document  
by MRF949T1/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
Motorola’s MRF949 is a high performance NPN transistor designed for use in  
high gain, low noise small–signal amplifiers. The MRF949 is well suited for low  
voltage wireless applications. This device features a 9 GHz DC current  
gain–bandwidth product with excellent linearity.  
I
= 50 mA  
LOW NOISE  
Cmax  
TRANSISTORS  
Low Noise Figure, NF  
= 1.4 dB (Typ) @ 1 GHz @ 5 mA  
min  
High Current Gain–Bandwidth Product, f = 9 GHz @ 15 mA  
t
Maximum Stable Gain = 18 dB @ 1 GHz @ 5 mA  
Output Third Order Intercept, OIP = +29 dBm @ 1 GHz @ 10 mA  
3
Fully Ion–Implanted with Gold Metallization and Nitride Passivation  
Available in Tape and Reel Packaging Options:  
T1 Suffix = 3,000 Units per Reel  
CASE 463–01, STYLE 1  
(SC–90)  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
10  
Unit  
Vdc  
Vdc  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
20  
1.5  
Power Dissipation (1) T = 75°C  
P
Dmax  
0.144  
1.92  
Watts  
mW/°C  
C
Derate linearly above T = 75°C @  
C
Collector Current — Continuous (2)  
Maximum Junction Temperature  
Storage Temperature  
I
50  
150  
mA  
°C  
C
T
Jmax  
T
stg  
55 to +150  
520  
°C  
Thermal Resistance, Junction to Case  
DEVICE MARKINGS  
R
°C/W  
θJC  
MRF949T1 = JL  
(1) To calculate the junction temperature use T = (P x R  
θJC  
) + T . The case temperature is measured on collector lead adjacent to the package  
C
J
D
body.  
(2) I — Continuous (MTBF > 10 years).  
C
Motorola, Inc. 1998  

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