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MRF941 PDF预览

MRF941

更新时间: 2024-11-15 19:02:39
品牌 Logo 应用领域
ADPOW 放大器晶体管
页数 文件大小 规格书
4页 78K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, M238, MACRO-X-4

MRF941 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:DISK BUTTON, O-PRDB-F4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.88
其他特性:LOW NOISE外壳连接:COLLECTOR
最大集电极电流 (IC):0.05 A基于收集器的最大容量:1 pF
集电极-发射极最大电压:10 V配置:SINGLE
最小直流电流增益 (hFE):50最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:O-PRDB-F4JESD-609代码:e0
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:DISK BUTTON
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:RADIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):8000 MHzBase Number Matches:1

MRF941 数据手册

 浏览型号MRF941的Datasheet PDF文件第2页浏览型号MRF941的Datasheet PDF文件第3页浏览型号MRF941的Datasheet PDF文件第4页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MRF941  
RF & MICROWAVE DISCRETE  
LOW POWER TRANSISTORS  
Features  
·
·
·
·
Fully Implanted Base and Emitter Structure.  
High Gain, GNF = 15 dB @ 1 GHz  
Low Noise Figure – 1.3dB @ 1GHz  
Ftau - 8.0 GHz @ 6v, 15mA  
Macro X  
·
Cost Effective Macro X Package  
DESCRIPTION: Designed for use in high gain, low noise small-signal amplifiers.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Value  
Unit  
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
10  
20  
V
1.5  
50  
V
mA  
P
Total Device Dissipation @ TC = 75ºC  
Storage Junction Temperature Range  
Maximum Junction Temperature  
0.4  
Watts  
ºC  
D
TSTG  
-65 to +150  
150  
TJmax  
ºC  
Thermal Data  
RTH(J-C)  
°C/W  
Thermal Resistance Junction-Case  
250  
MSC1326.PDF 10-25-99  

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