MRF9210

更新时间： 2024-11-14 22:31:39

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
8页	481K
描述
RF Power Field Effect Transistor

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MRF9210 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

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by MRF9210/D

The RF MOSFET Line

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

MRF9210R3

Designed for broadband commercial and industrial applications with

frequencies from 865 to 895 MHz. The high gain and broadband performance

of this device make it ideal for large - signal, common source amplifier

applications in 26 volt base station equipment.

880 MHz, 200 W, 26 V

LATERAL N-CHANNEL

BROADBAND

• Typical CDMA Performance @ 880 MHz, 26 Volts, I_DQ= 2 x 950 mA

IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

Output Power — 40 Watts

RF POWER MOSFET

Power Gain — 16.5 dB

Efficiency — 25.5%

Adjacent Channel Power —

750 kHz: -46.2 dBc @ 30 kHz BW

1.98 MHz: -60 dBc @ 30 kHz BW

• Internally Matched, Controlled Q, for Ease of Use

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz,

CASE 375G-04, STYLE 1

NI-860C3

40 Watts Avg. N-CDMA

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

- 0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

565

3.2

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Value (1)

Unit

0.31

°C/W

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

1 (Minimum)

M3 (Minimum)

C7 (Minimum)

Machine Model

Charge Device Model

(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to

access the MTTF calculators by product.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 1

MOTOROLA RF DEVICE DATA

MRF9210R3

 Motorola, Inc. 2004

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7 8

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与MRF9210相关器件

型号	品牌	获取价格	描述	数据表
MRF9210R	NXP	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-860C3, CASE 375G-04, 4 PIN
MRF9210R3	MOTOROLA	获取价格	RF Power Field Effect Transistor
MRF927T1	MOTOROLA	获取价格	LOW NOISE HIGH FREQUENCY TRANSISTOR
MRF927T3	MOTOROLA	获取价格	LOW NOISE HIGH FREQUENCY TRANSISTOR
MRF9331	MOTOROLA	获取价格	Transistor
MRF9331L	MOTOROLA	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MRF9331LT3	MOTOROLA	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CASE 318A-05, 4 PIN
MRF9382T1	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9382T1	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,28V V(BR)DSS,2.2A I(D),RFMOD
MRF941	ADPOW	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili

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