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MRF9210R3 PDF预览

MRF9210R3

更新时间： 2024-11-14 22:31:39
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频场效应晶体管功率场效应晶体管放大器局域网
页数 文件大小 规格书
8页 481K
描述
RF Power Field Effect Transistor

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中文翻译

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MRF9210R3 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-CDFM-F4
针数：4Reach Compliance Code：unknown
风险等级：5.27Is Samacsys：N
外壳连接：SOURCE配置：Single
最小漏源击穿电压：65 VFET 技术：METAL-OXIDE SEMICONDUCTOR
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-CDFM-F4
端子数量：4工作模式：ENHANCEMENT MODE
最高工作温度：200 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：565 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

MRF9210R3 数据手册

 浏览型号MRF9210R3的Datasheet PDF文件第2页浏览型号MRF9210R3的Datasheet PDF文件第3页浏览型号MRF9210R3的Datasheet PDF文件第4页浏览型号MRF9210R3的Datasheet PDF文件第5页浏览型号MRF9210R3的Datasheet PDF文件第6页浏览型号MRF9210R3的Datasheet PDF文件第7页 
MOTOROLA  
SEMICONDUCTOR TECHNICAL DATA  
Freescale Semiconductor, Inc.  
Order this document  
by MRF9210/D  
The RF MOSFET Line  
RF Power Field Effect Transistor  
N-Channel Enhancement-Mode Lateral MOSFET  
MRF9210R3  
Designed for broadband commercial and industrial applications with  
frequencies from 865 to 895 MHz. The high gain and broadband performance  
of this device make it ideal for large - signal, common source amplifier  
applications in 26 volt base station equipment.  
880 MHz, 200 W, 26 V  
LATERAL N-CHANNEL  
BROADBAND  
• Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 950 mA  
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13  
Output Power — 40 Watts  
RF POWER MOSFET  
Power Gain — 16.5 dB  
Efficiency — 25.5%  
Adjacent Channel Power —  
750 kHz: -46.2 dBc @ 30 kHz BW  
1.98 MHz: -60 dBc @ 30 kHz BW  
• Internally Matched, Controlled Q, for Ease of Use  
• Integrated ESD Protection  
• Designed for Maximum Gain and Insertion Phase Flatness  
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz,  
CASE 375G-04, STYLE 1  
NI-860C3  
40 Watts Avg. N-CDMA  
• Excellent Thermal Stability  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
V
- 0.5, +15  
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
565  
3.2  
Watts  
W/°C  
C
D
Storage Temperature Range  
Operating Junction Temperature  
T
- 65 to +150  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Value (1)  
Unit  
R
θ
JC  
0.31  
°C/W  
ESD PROTECTION CHARACTERISTICS  
Test Conditions  
Class  
Human Body Model  
1 (Minimum)  
M3 (Minimum)  
C7 (Minimum)  
Machine Model  
Charge Device Model  
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to  
access the MTTF calculators by product.  
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 1  
Motorola, Inc. 2004  
For More Information On This Product,  
Go to: www.freescale.com  
 
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