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MRF9130L PDF预览

MRF9130L

更新时间: 2024-09-30 22:31:39
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
12页 557K
描述
RF Power Field Effect Transistors

MRF9130L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-CDFM-F2针数:2
Reach Compliance Code:unknown风险等级:5.78
其他特性:HIGH EFFICIENCY外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:65 V
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-CDFM-F2湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):225
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):298 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MRF9130L 数据手册

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MOTOROLA  
SEMICONDUCTOR TECHNICAL DATA  
Freescale Semiconductor, Inc.  
Order this document  
by MRF9130L/D  
The RF Sub-Micron MOSFET Line  
MRF9130LR3  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
MRF9130LSR3  
Designed for GSM and GSM EDGE base station applications with  
frequencies from 921 to 960 MHz, the high gain and broadband performance  
of these devices make them ideal for large-signal, common-source amplifier  
applications in 28 volt base station equipment.  
GSM/GSM EDGE  
921-960 MHz, 130 W, 28 V  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts  
Output Power @ P1dB — 135 Watts  
Power Gain — 16.5 dB @ 130 Watts Output Power  
Efficiency — 48% @ 130 Watts Output Power  
Internally Matched, Controlled Q, for Ease of Use  
High Gain, High Efficiency and High Linearity  
Integrated ESD Protection  
Designed for Maximum Gain and Insertion Phase Flatness  
Capable of Handling 5:1 VSWR, @ 28 Vdc, All Frequency Band,  
130 Watts CW Output Power  
Excellent Thermal Stability  
Characterized with Series Equivalent Large-Signal Impedance Parameters  
Low Gold Plating Thickness on Leads, 40µ″ Nominal.  
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
CASE 465-06, STYLE 1  
NI-780  
MRF9130LR3  
CASE 465A-06, STYLE 1  
NI-780S  
MRF9130LSR3  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
V
- 0.5, +15  
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
298  
1.7  
Watts  
W/°C  
C
D
Storage Temperature Range  
Operating Junction Temperature  
T
- 65 to +200  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Value  
Unit  
R
θ
JC  
0.6  
°C/W  
ESD PROTECTION CHARACTERISTICS  
Test Conditions  
Class  
Human Body Model  
Machine Model  
1 (Minimum)  
M2 (Minimum)  
C7 (Minimum)  
Charge Device Model  
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 2  
Motorola, Inc. 2004  
For More Information On This Product,  
Go to: www.freescale.com  
 

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