Datasheet > MRF917T1

MRF917T1

更新时间： 2024-11-14 22:51:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
12页	255K
描述
LOW NOISE HIGH FREQUENCY TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRF917T1 数据手册

Order this document

from RF Marketing

SEMICONDUCTOR TECHNICAL DATA

The RF Small Signal Line

Designed for low noise, wide dynamic range front end amplifiers, at

frequencies to 1.5 GHz. Specifically aimed at portable communication devices

such as pagers and hand–held phones.

LOW NOISE

HIGH FREQUENCY

TRANSISTOR

•

Small, Surface–Mount Package (SC–70)

High Current Gain–Bandwidth Product (f = 6.0 GHz Typ @ 6.0 V, 20 mA)

Low Noise Figure

NF = 1.7 dB (Typ) @ 500 MHz

•

Available in Tape and Reel Packaging.

T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel

CASE 419–02, STYLE 3

(SC–70/SOT–323)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

Vdc

2.0

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 75°C (1)

222

Derate above 75°C

3.0

– 55 to +150

150

mW/°C

Storage Temperature Range

Operating Temperature Range

stg

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction–to–Case (1)

338

°C/W

θJC

DEVICE MARKING

MRF917T1 = K

(1) Case temperature measured on the collector lead immediately adjacent to body of package.

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1996

MRF917T1

12 3 4 5 6 7...12

中文翻译

下载PDF

与MRF917T1相关器件

型号	品牌	获取价格	描述	数据表
MRF9180	MOTOROLA	获取价格	880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF9180	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-262A2VAR
MRF9180R6	MOTOROLA	获取价格	2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-1230, CASE 375D-04, 4 PIN
MRF9180R6	NXP	获取价格	2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-1230, CASE 375D-0
MRF9180S	MOTOROLA	获取价格	880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF9200LR3	FREESCALE	获取价格	N−Channel Enhancement−Mode Lateral MOSFETs
MRF9200LR3_06	FREESCALE	获取价格	880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
MRF9200LSR3	FREESCALE	获取价格	N−Channel Enhancement−Mode Lateral MOSFETs
MRF9210	MOTOROLA	获取价格	RF Power Field Effect Transistor
MRF9210R	NXP	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-860C3, CASE 375G-04, 4 PIN