Datasheet > MRF9200LR3_06

MRF9200LR3_06

更新时间： 2024-10-01 04:14:39

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
12页	458K
描述
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs

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MRF9200LR3_06 数据手册

Document Number: MRF9200L

Rev. 3, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF9200LR3

MRF9200LSR3

Designed for broadband commercial and industrial applications with

frequencies to 1000 MHz. The high gain and broadband performance of these

devices make them ideal for large-signal, common-source amplifier applica-

tions in 26 volt base station equipment.

• Typical Single-Carrier N-CDMA Performance @ 880 MHz: V_DD= 26 Volts,

880 MHz, 40 W AVG., 26 V

SINGLE N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

_DQ= 2400 mA, P_out= 40 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz.

Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 17.5 dB

Drain Efficiency — 25%

ACPR @ 750 kHz Offset — -46.5 dBc in 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

CASE 465B-03, STYLE 1

NI-880

MRF9200LR3

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C-02, STYLE 1

NI-880S

MRF9200LSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

3.6

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 60°C, 200 W CW

Case Temperature 80°C, 40 W CW

°C/W

0.28

0.34

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to

access the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF9200LR3 MRF9200LSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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与MRF9200LR3_06相关器件

型号	品牌	获取价格	描述	数据表
MRF9200LSR3	FREESCALE	获取价格	N−Channel Enhancement−Mode Lateral MOSFETs
MRF9210	MOTOROLA	获取价格	RF Power Field Effect Transistor
MRF9210R	NXP	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-860C3, CASE 375G-04, 4 PIN
MRF9210R3	MOTOROLA	获取价格	RF Power Field Effect Transistor
MRF927T1	MOTOROLA	获取价格	LOW NOISE HIGH FREQUENCY TRANSISTOR
MRF927T3	MOTOROLA	获取价格	LOW NOISE HIGH FREQUENCY TRANSISTOR
MRF9331	MOTOROLA	获取价格	Transistor
MRF9331L	MOTOROLA	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MRF9331LT3	MOTOROLA	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CASE 318A-05, 4 PIN
MRF9382T1	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

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