Datasheet > MRF9180

MRF9180

更新时间： 2024-11-15 20:19:59

品牌	Logo	应用领域
恩智浦 - NXP		局域网放大器晶体管
页数	文件大小	规格书
10页	337K
描述
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-262A2VAR

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MRF9180 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.71	Is Samacsys：	N
Base Number Matches：	1

MRF9180 数据手册

Document Number: MRF9180

Rev. 10, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

MRF9180R6

Designed for broadband commercial and industrial applications with

frequencies from 865 to 895 MHz. The high gain and broadband performance

of this device make it ideal for large - signal, common - source amplifier

applications in 26 volt base station equipment.

• Typical CDMA Performance @ 880 MHz, 26 Volts, I_DQ= 1400 mA

IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

Output Power — 40 Watts

880 MHz, 170 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFET

Power Gain — 17 dB

Efficiency — 26%

Adjacent Channel Power -

750 kHz: -45.0 dBc in 30 kHz BW

1.98 MHz: -60.0 dBc in 30 kHz BW

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

CASE 375D-05, STYLE 1

NI-1230

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

388

2.22

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.45

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M1 (Minimum)

MRF9180R6

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...10

中文翻译

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与MRF9180相关器件

型号	品牌	获取价格	描述	数据表
MRF9180R6	MOTOROLA	获取价格	2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-1230, CASE 375D-04, 4 PIN
MRF9180R6	NXP	获取价格	2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-1230, CASE 375D-0
MRF9180S	MOTOROLA	获取价格	880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF9200LR3	FREESCALE	获取价格	N−Channel Enhancement−Mode Lateral MOSFETs
MRF9200LR3_06	FREESCALE	获取价格	880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
MRF9200LSR3	FREESCALE	获取价格	N−Channel Enhancement−Mode Lateral MOSFETs
MRF9210	MOTOROLA	获取价格	RF Power Field Effect Transistor
MRF9210R	NXP	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-860C3, CASE 375G-04, 4 PIN
MRF9210R3	MOTOROLA	获取价格	RF Power Field Effect Transistor
MRF927T1	MOTOROLA	获取价格	LOW NOISE HIGH FREQUENCY TRANSISTOR

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