Datasheet > MRF9120LR3

MRF9120LR3

更新时间： 2024-11-14 22:07:51

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摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频放大器局域网
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RF Power Field Effect Transistors

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MRF9120LR3 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

Order this document

by MRF9120/D

The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequen-

cies from 865 to 895 MHz. The high gain and broadband performance of these

devices make them ideal for large-signal, common source amplifier applications

in 26 volt base station equipment.

MRF9120R3

MRF9120LR3

• Typical CDMA Performance @ 880 MHz, 26 Volts, I_DQ= 2 x 500 mA

IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

Output Power — 26 Watts

880 MHz, 120 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Power Gain — 16 dB

Efficiency — 26%

Adjacent Channel Power —

750 kHz: -45 dBc @ 30 kHz BW

1.98 MHz: -60 dBc @ 30 kHz BW

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts (CW)

Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Integrated ESD Protection

CASE 375B-04, STYLE 1

NI-860

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

- 0.5, +65

- 0.5, +15

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

250

1.43

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Value (1)

Unit

0.45

°C/W

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

1 (Minimum)

M1 (Minimum)

Machine Model

(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to

access the MTTF calculators by product.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Rev. 7

MOTOROLA RF DEVICE DATA

MRF9120R3 MRF9120LR3

 Motorola, Inc. 2004

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7...12

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与MRF9120LR3相关器件

型号	品牌	获取价格	描述	数据表
MRF9120R3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF9120R3	NXP	获取价格	2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-860, CASE 375B-04, 4 PIN
MRF9120S	MOTOROLA	获取价格	暂无描述
MRF9130L	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF9130LR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF9130LSR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF9135L	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9135LR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9135LSR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF914	MICROSEMI	获取价格	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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