Datasheet > MRF9100LSR3

MRF9100LSR3

更新时间： 2024-11-14 05:50:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	357K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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数据手册

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MRF9100LSR3 数据手册

Document Number: MRF9100

Rev. 5, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF9100LR3

MRF9100LSR3

Designed for GSM and EDGE base station applications with frequencies

from 921 to 960 MHz, the high gain and broadband performance of these

devices make them ideal for large-signal, common source amplifier applica-

tions in 26 volt base station equipment.

• On-Die Integrated Input Match

• Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts

Output Power, P1dB — 110 Watts

900 MHz, 110 W, 26 V

GSM/EDGE

Power Gain @ P1dB — 16.5 dB

Efficiency @ P1dB — 53%

LATERAL N-CHANNEL

RF POWER MOSFETs

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz,

100 Watts CW Output Power

Features

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465-06, STYLE 1

NI-780

MRF9100LR3

CASE 465A-06, STYLE 1

NI-780S

MRF9100LSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

- 0.5. +65

- 0.5. +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

175

1.0

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

1.0

°C/W

MRF9100LR3 MRF9100LSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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