Datasheet > MRF6S21100NR1_08

MRF6S21100NR1_08

更新时间： 2024-11-01 10:47:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
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描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6S21100NR1_08 数据手册

Document Number: MRF6S21100N

Rev. 3, 12/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications. To be used in Class AB for PCN- PCS/cellular radio, WLL and

TD-SCDMA applications.

MRF6S21100NR1

MRF6S21100NBR1

• Typical 2-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ= 1050 mA,

P_out= 23 Watts Avg., f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz,

PAR = 8.5 dB @ 0.01% Probability on CCDF.

ꢀPower Gain — 14.5 dB

ꢀDrain Efficiency — 25.5%

ꢀIM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Bandwidth

ꢀACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Bandwidth

2110-2170 MHz, 23 W AVG., 28 V

2 x W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

MRF6S21100NR1

• 225°C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1484-04, STYLE 1

TO-272 WB-4

PLASTIC

MRF6S21100NBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

-ꢁ65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

DSS

stg

°C

(1,2)

Operating Junction Temperature

225

°C

Table 2. Thermal Characteristics

Characteristic

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW

Case Temperature 73°C, 23 W CW

°C/W

0.57

0.66

ꢂꢃ1. Continuous use at maximum temperature will affect MTTF.

ꢃꢂ2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

ꢃꢂ3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S21100NR1 MRF6S21100NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...20

中文翻译

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与MRF6S21100NR1_08相关器件

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