Datasheet > MRF6S27085HR3

MRF6S27085HR3

更新时间： 2024-09-23 22:18:15

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描述
N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6S27085HR3 数据手册

Document Number: MRF6S27085H

Rev. 1, 1/2005

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF6S27085HR3

MRF6S27085HSR3

Designed for N-CDMA base station applications with frequencies from 2600

to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

2700 MHz, 20 W AVG., 28 V

SINGLE N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

• Typical Single-Carrier N-CDMA Performance: V_DD= 28 Volts, I_DQ

900 mA, P_out= 20 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot,

Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =

1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 15.5 dB

Drain Efficiency — 23.5%

ACPR @ 885 kHz Offset — -48 dBc @ 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 85 Watts CW

Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched, Controlled Q, for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 465-06, STYLE 1

NI-780

• Lower Thermal Resistance Package

MRF6S27085HR3

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• Low Gold Plating Thickness on Leads, 40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465A-06, STYLE 1

NI-780S

MRF6S27085HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

-0.5, +68

-0.5, +12

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

350

W/°C

Storage Temperature Range

Operating Junction Temperature

CW Operation

- 65 to +150

°C

stg

200

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 85 W CW

Case Temperature 76°C, 20 W CW

°C/W

0.50

0.56

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF6S27085HR3 MRF6S27085HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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与MRF6S27085HR3相关器件

型号	品牌	获取价格	描述	数据表
MRF6S27085HR3_06	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S27085HR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27085HSR3	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S9045	FREESCALE	获取价格	RF Power Field Effect Transistors
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MRF6S9045N	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9045NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9045NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9045NR1_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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