Datasheet > MRF6S27050HSR3

MRF6S27050HSR3

更新时间： 2024-09-24 03:59:19

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	464K
描述
RF Power Field Effect Transistors

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数据手册

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MRF6S27050HSR3 数据手册

Document Number: MRF6S27050H

Rev. 0, 11/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 2500 to

2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class

AB and Class C amplifier applications.

MRF6S27050HR3

MRF6S27050HSR3

• Typical Single-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ

500 mA, P_out= 7 Watts Avg., Full Frequency Band, Channel Bandwidth =

3.84 MHz. PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 16 dB

2500-2700 MHz, 7 W AVG., 28 V

SINGLE W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

Drain Efficiency — 22.5%

ACPR @ 5 MHz Offset — -42.5 dBc @ 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2600 MHz, 50 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 465-06, STYLE 1

NI-780

• Lower Thermal Resistance Package

MRF6S27050HR3

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465A-06, STYLE 1

NI-780S

MRF6S27050HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

- 65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

DSS

stg

°C

(1,2)

Operating Junction Temperature

225

°C

Table 2. Thermal Characteristics

Characteristic

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 43 W CW

Case Temperature 72°C, 7 W CW

°C/W

0.85

0.98

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S27050HR3 MRF6S27050HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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与MRF6S27050HSR3相关器件

型号	品牌	获取价格	描述	数据表
MRF6S27085HR3	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27085HR3_06	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S27085HR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27085HSR3	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S9045	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9045MBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9045MR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9045N	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S9045NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
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